•A SnCl2•3FACl complex to assist MA-free Sn-Pb perovskite growth is reported•Film quality is enhanced, with improved microstructure and reduced residual stress•Near ideal-band-gap device efficiency is improved to ∼20% with enhanced stability To reach the ideal band gap for single-junction perovskite solar cells (PSCs), it is generally necessary to use about 25–30 mol% Sn in the Sn-Pb mixed hybrid perovskites. Synthesis of such Sn-Pb compositions has been difficult, with uncontrolled structural and defect characteristics. Consequently, it has been challenging to achieve simultaneously both high efficiency and good long-term operational stability for Sn-Pb-based ideal-band-gap PSCs. In this work, we show that the use of a SnCl2⋅3FACl complex additive can significantly enhance the methylammonium-free Sn-Pb perovskite film quality, with improved microstructure, reduced defect density, and suppressed development of residual stress. With this approach, we demonstrate near ideal-band-gap (∼1.34 eV) methylammonium-free Sn-Pb-based PSCs with high efficiency (∼20%) and promising operational stability of maintaining >80% of initial power-conversion efficiency over 750 h under maximum-power-point tracking. The development of mixed tin-lead (Sn-Pb)-based perovskite solar cells (PSCs) with low band gap (1.2–1.4 eV) has become critical not only for pushing single-junction devices toward the maximum efficiency given by the Shockley-Queisser limit, but also for enabling all-perovskite tandem devices beyond this limit. However, achieving high power-conversion efficiency (PCE) and long-term device operation stability simultaneously remains a significant challenge for Sn-Pb-based PSCs. Here, we demonstrate near ideal-band-gap (∼1.34 eV) methylammonium-free Sn-Pb-based PSCs with high efficiency (∼20%) and promising operational stability of maintaining >80% of initial PCE over 750 h under maximum-power-point tracking. The key to this success is the use of a SnCl2⋅3FACl complex additive that improves the microstructure and reduces the development of residual stress in the Sn-Pb perovskite thin films, which in turn enhances the efficiency and stability of the Sn-Pb-based ideal-band-gap PSCs. The development of mixed tin-lead (Sn-Pb)-based perovskite solar cells (PSCs) with low band gap (1.2–1.4 eV) has become critical not only for pushing single-junction devices toward the maximum efficiency given by the Shockley-Queisser limit, but also for enabling all-perovskite tandem devices beyond this limit. However, achieving high power-conversion efficiency (PCE) and long-term device operation stability simultaneously remains a significant challenge for Sn-Pb-based PSCs. Here, we demonstrate near ideal-band-gap (∼1.34 eV) methylammonium-free Sn-Pb-based PSCs with high efficiency (∼20%) and promising operational stability of maintaining >80% of initial PCE over 750 h under maximum-power-point tracking. The key to this success is the use of a SnCl2⋅3FACl complex additive that improves the microstructure and reduces the development of residual stress in the Sn-Pb perovskite thin films, which in turn enhances the efficiency and stability of the Sn-Pb-based ideal-band-gap PSCs. Perovskite solar cells (PSCs) have emerged as a disruptive photovoltaic (PV) technology that has been researched heavily since their invention in 2009.1Dunlap-Shohl W.A. Zhou Y. Padture N.P. Mitzi D.B. Synthetic approaches for halide perovskite thin films.Chem. Rev. 2019; 119: 3193-3295Crossref PubMed Scopus (292) Google Scholar, 2Snaith H.J. Present status and future prospects of perovskite photovoltaics.Nat. 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Habisreutinger S.N. Chen X. Wang K. Enhancing electron diffusion length in narrow-bandgap perovskites for efficient monolithic perovskite tandem solar cells.Nat. Commun. 2019; 10: 1-9Crossref PubMed Scopus (67) Google Scholar, 10Wei M. Xiao K. Walters G. Lin R. Zhao Y. Saidaminov M.I. Todorovic P. Johnston A. Huang Z. Chen H. et al.Combining efficiency and stability in mixed tin-lead perovskite solar cells by capping grains with an ultrathin 2D layer.Adv. Mater. 2020; 32: 1907058Crossref Scopus (83) Google Scholar, 11Ogomi Y. Morita A. Tsukamoto S. Saitho T. Fujikawa N. Shen Q. Toyoda T. Yoshino K. Pandey S.S. Ma T. CH3NH3SnxPb(1–x)I3 perovskite solar cells covering up to 1060 nm.J. Phys. Chem. Lett. 2014; 5: 1004-1011Crossref PubMed Scopus (750) Google Scholar, 12Hao F. Stoumpos C.C. Chang R.P. Kanatzidis M.G. Anomalous band gap behavior in mixed Sn and Pb perovskites enables broadening of absorption spectrum in solar cells.J. Am. Chem. Soc. 2014; 136: 8094-8099Crossref PubMed Scopus (985) Google Scholar For such high-PCE Sn-Pb-based PSCs, the band gap of Sn-Pb perovskites is typically ∼1.25 eV, which is frequently studied for use as the bottom cell in a tandem device.8Tong J. Song Z. Kim D.H. Chen X. Chen C. Palmstrom A.F. Ndione P.F. Reese M.O. Dunfield S.P. Reid O.G. Carrier lifetimes of >1 μs in Sn-Pb perovskites enable efficient all-perovskite tandem solar cells.Science. 2019; 364: 475-479Crossref PubMed Scopus (472) Google Scholar, 9Yang Z. Yu Z. Wei H. Xiao X. Ni Z. Chen B. Deng Y. Habisreutinger S.N. Chen X. Wang K. Enhancing electron diffusion length in narrow-bandgap perovskites for efficient monolithic perovskite tandem solar cells.Nat. Commun. 2019; 10: 1-9Crossref PubMed Scopus (67) Google Scholar, 10Wei M. Xiao K. Walters G. Lin R. Zhao Y. Saidaminov M.I. Todorovic P. Johnston A. Huang Z. Chen H. et al.Combining efficiency and stability in mixed tin-lead perovskite solar cells by capping grains with an ultrathin 2D layer.Adv. Mater. 2020; 32: 1907058Crossref Scopus (83) Google Scholar The perovskite composition for these high-efficiency Sn-Pb PSCs often has a Sn:Pb ratio of about 0.5:0.5 to 0.6:0.4. To reach the ideal band gap for single-junction devices, it is necessary to reduce the amount of Sn to about 25–30 mol% in hybrid perovskites.13Yang Z. Rajagopal A. Jen A.K.Y. Ideal bandgap organic–inorganic hybrid perovskite solar cells.Adv. Mater. 2017; 29: 1704418Crossref Scopus (104) Google Scholar, 14Zong Y. Wang N. Zhang L. Ju M.G. Zeng X.C. Sun X.W. Zhou Y. Padture N.P. Homogenous alloys of formamidinium lead triiodide and cesium tin triiodide for efficient ideal-bandgap perovskite solar cells.Angew. Chem. Int. Ed. 2017; 56: 12658-12662Crossref PubMed Scopus (54) Google Scholar, 15Prasanna R. Gold-Parker A. Leijtens T. Conings B. Babayigit A. Boyen H.-G. Toney M.F. McGehee M.D. Band gap tuning via lattice contraction and octahedral tilting in perovskite materials for photovoltaics.J. Am. Chem. Soc. 2017; 139: 11117-11124Crossref PubMed Scopus (332) Google Scholar Synthesis of these related compositions has been challenging, with uncontrolled structural and defect characteristics. Consequently, it has been very challenging to achieve simultaneously both high efficiency and good long-term operational stability for Sn-Pb-based ideal-band-gap PSCs.13Yang Z. Rajagopal A. Jen A.K.Y. Ideal bandgap organic–inorganic hybrid perovskite solar cells.Adv. Mater. 2017; 29: 1704418Crossref Scopus (104) Google Scholar,14Zong Y. Wang N. Zhang L. Ju M.G. Zeng X.C. Sun X.W. Zhou Y. Padture N.P. Homogenous alloys of formamidinium lead triiodide and cesium tin triiodide for efficient ideal-bandgap perovskite solar cells.Angew. Chem. Int. Ed. 2017; 56: 12658-12662Crossref PubMed Scopus (54) Google Scholar,16Li N. Zhu Z. Li J. Jen A.K.Y. Wang L. Inorganic CsPb1−xSnxIBr2 for efficient wide-bandgap perovskite solar cells.Adv. Energy Mater. 2018; 8: 1800525Crossref Scopus (139) Google Scholar,17Hu M. Chen M. Guo P. Zhou H. Deng J. Yao Y. Jiang Y. Gong J. Dai Z. Zhou Y. Sub-1.4 eV bandgap inorganic perovskite solar cells with long-term stability.Nat. Commun. 2020; 11: 1-10PubMed Google Scholar In this study, we show that, in addition to the quality of the Sn-Pb perovskite thin films, the residual stresses in the thin films appear to play an important role in influencing both device stability and efficiency. By utilizing a novel Sn-halide complex (SHC) additive, SnCl2⋅xFACl (x is optimized to 3; 5 mol% addition; FA, formamidinium), the residual stress is effectively reduced in the methylammonium (MA)-free, Cs-FA-based Sn-Pb halide perovskite thin film of composition (FAPbI3)0.7(CsSnI3)0.3 (or Cs0.3FA0.7Sn0.3Pb0.7I3) with a near-ideal band gap of ∼1.34 eV. It is found that SnCl2⋅3FACl enables the formation of a high-quality perovskite-substrate interface during the room-temperature solution precipitation stage. The use of this additive also reduces the defect density by 2 orders of magnitude, and it further improves the microstructures and optoelectronic properties of the thin films. Using this approach, we are able to push the PCE of the resulting PSCs to near 20%, which is the highest for MA-free Sn-Pb-based PSCs with a near-ideal band gap. More importantly, we demonstrate a promising operational stability of maintaining >80% of initial PCE over 750 h under continuous operation at about 45°C with maximum power point (MPP) tracking under one-sun-intensity illumination. Our study attests to the potential for the realization of stable and efficient Sn-Pb-based ideal-band-gap PSCs. For fabricating the PSC devices, we have chosen the MA-free perovskite composition of Cs0.3FA0.7Sn0.3Pb0.7I3, not only for its near ideal band gap (Figure S1) but also to avoid the deleterious effect of MA+ volatility that is widely hypothesized in limiting the long-term operational stability of PSCs.18Turren-Cruz S.-H. Hagfeldt A. Saliba M. Methylammonium-free, high-performance, and stable perovskite solar cells on a planar architecture.Science. 2018; 362: 449-453Crossref PubMed Scopus (541) Google Scholar Here we have used a new thin-film tailoring method for fabricating perovskite thin films in the presence of SnCl2⋅3FACl. Briefly, a stoichiometric perovskite precursor solution with 5 mol% excess SnCl2⋅3FACl additive was first spin-coated, followed by thermal annealing (see Supplemental information for details). PSCs were prepared with an “inverted” device structure comprising glass/indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/perovskite/C60/bathocuproine (BCP)/Ag, which is typically used for high-efficiency Sn-Pb low-band-gap PSCs. The cross-sectional scanning electron microscopy (SEM) image of a standard device stack is shown in Figure S2. The typical current density-voltage (J-V) curves, and the corresponding external quantum efficiency (EQE) spectra, for PSCs made with and without the SnCl2⋅3FACl additive are shown in Figures 1A and 1B , respectively. The PSC made with SnCl2⋅3FACl additive shows a reverse-scan PCE of 18.3% with a short-circuit current density (JSC) of 29.1 mA/cm2, an open-circuit voltage (VOC) of 0.787 V, and a fill factor (FF) of 79.9%. The forward scan of the same device shows a PCE of 17.6%, and the stabilized power output (SPO; Figure 1A, inset) efficiency is 18.3%. For comparison, the PSC without the SnCl2⋅3FACl additive shows a PCE of 14.7% for reverse scan, 13.1% for forward scan, and SPO efficiency of 14.2%. The detailed device parameters are given in Table S1. The significant improvement in device performance is attributed largely to the higher VOC and FF. All these observations are statistically reproducible based on PV parameters from 20 devices for each device condition (Figure 1C). There is a negligible impact of the additive on JSC, which is consistent with the device EQE spectra (Figure 1B) and the optical absorption results (Figure S1). The slight increase in the band gap with additive is consistent with the blue shift of the onset of the EQE spectrum on the long wavelength side. However, there is also a slight change of the EQE spectra in the shorter wavelength range. These changes are relatively small with opposite effects, leading to comparable JSC values in the two devices. Note that the PSCs prepared with SnCl2⋅xFACl, with x ranging from 1.5 to 4.5, all showed enhanced device performance compared with the PSCs without the additive (Figure S3), but x = 3 gave the highest performance improvement. In addition, 5 mol% SnCl2⋅3FACl addition was found to be optimum (Figure S4). We observe that the large performance improvements are not achieved simply by using individual additive components, i.e., SnCl2 and FACl (Figure S5). To understand the origin of the significantly improved device performance associated with using the SnCl2⋅3FACl additive (5 mol%), a set of physical and optoelectronic properties of the thin films was characterized. The top-view SEM images in Figures 2A and 2B show that the apparent grain size is increased from a few hundred nanometers to about a micrometer with the additive. The statistical distribution of the apparent grain sizes of the pristine sample and that made with the SnCl2⋅3FACl additive are further compared in Figure S6. This can be attributed to the FACl component in the additive complex facilitating the grain-boundary migration during the thin film growth.1Dunlap-Shohl W.A. Zhou Y. Padture N.P. Mitzi D.B. Synthetic approaches for halide perovskite thin films.Chem. Rev. 2019; 119: 3193-3295Crossref PubMed Scopus (292) Google Scholar The indexed X-ray diffraction (XRD) patterns in Figure 2C confirm the pure perovskite phase in both thin films, with and without SnCl2⋅3FACl additive, but the thin film with the additive shows about 10-fold increase in the intensity on the same scale, and a 20% reduction in the FWHM (full width at half-maximum) of the characteristic 100 peak, which indicates improved crystallinity. Furthermore, the SnCl2⋅3FACl additive is also expected to passivate the grain boundaries by possibly decorating them with SnCl2 via a thermal decomposition process, similar to the effect of the SnF2⋅xFACl additive in a previous study.16Li N. Zhu Z. Li J. Jen A.K.Y. Wang L. Inorganic CsPb1−xSnxIBr2 for efficient wide-bandgap perovskite solar cells.Adv. Energy Mater. 2018; 8: 1800525Crossref Scopus (139) Google Scholar The grain-boundary passivated microstructure is confirmed using conductive atomic force microscopy (AFM) in Figure S7, where the grain boundaries are coated continuously with less conductive SnCl2 phases. The electrical measurement based on a field-effect transistor (FET) configuration shows that the “dark” carrier density of the thin films is reduced by 2 orders of magnitude with the use of the SnCl2⋅3FACl additive (Figures 2D–2F and S8), which is indicative of very low defect density in that thin film. These results correlate well with X-ray photoelectron spectroscopy (XPS) analysis of the corresponding perovskite thin films (Figure S9 and Table S2). The improved microstructure and crystallinity of perovskite thin films are often key factors that contribute to enhancing PSC performance. In this context, we also prepared another set of Cs0.3FA0.7Sn0.3Pb0.7I3 perovskite thin films and devices using a different additive, SnF2⋅3FACl (5 mol%). In comparison with the pristine thin films without any additive, the use of SnF2⋅xFACl additive also enhanced the crystallinity (Figure S10) and apparent grain size significantly, to a degree similar to what is observed in the SnCl2⋅3FACl additive case. The optical band gap and absorption are also similar for thin films prepared using SnCl2⋅3FACl and SnF2⋅3FACl additives (Figure S1). However, the SnF2⋅3FACl-additive-based thin film exhibited about 3-fold higher dark carrier density (Figure S8), compared with the SnCl2⋅3FACl-additive-based thin film. Furthermore, the SnF2⋅3FACl-additive-based device reached an SPO efficiency of only 16.6% (Figure S11 and Table S1), which is higher than the pristine device (14.2%, Figure 1A), but significantly lower than the SnCl2⋅3FACl-augmented device (18.3%, Figure 1A). These results indicate that improved morphology and crystallinity are not sufficient to account for the significant improvements in the PSC performance observed using the SnCl2⋅3FACl additive. Recently, stress (or strain) has been shown to affect the charge transport and chemical stability of perovskite thin films.19Xue D.-J. Hou Y. Liu S.-C. Wei M. Chen B. Huang Z. Li Z. Sun B. Proppe A.H. Dong Y. Regulating strain in perovskite thin films through charge-transport layers.Nat. Commun. 2020; 11: 1-8Crossref PubMed Scopus (125) Google Scholar, 20Zhu C. Niu X. Fu Y. Li N. Hu C. Chen Y. He X. Na G. Liu P. Zai H. Strain engineering in perovskite solar cells and its impacts on carrier dynamics.Nat. Commun. 2019; 10: 1-11PubMed Google Scholar, 21Zhao J. Deng Y. Wei H. Zheng X. Yu Z. Shao Y. Shield J.E. Huang J. Strained hybrid perovskite thin films and their impact on the intrinsic stability of perovskite solar cells.Sci. 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Facile healing of cracks in organic–inorganic halide perovskite thin films.Acta Mater. 2020; 187: 112-121Crossref Scopus (21) Google Scholar In Figure 3A and 3B, (220) interplanar spacing (d220) is plotted as a function of sin2ψ for Cs0.3FA0.7Sn0.3Pb0.7I3 perovskite thin films without and with the SnCl2⋅3FACl additive, respectively. A positive slope of the linear fit to the d220-sin2ψ data for the pristine thin film indicates the presence of biaxial tensile residual stress (or strain). In contrast, the thin film with the SnCl2⋅3FACl additive shows a much lower positive slope. The biaxial residual stress (σR) can be estimated from the sin2ψ data in Figures 3A and 3B using the following relation:27M. Birkholz. Thin Film Analysis by X-Ray Scattering. Berlin: Wiley-VCH.Google ScholarσR=(E<220>1+ν)(mdn),(Equation 1) where m is the slope of the linear fit to the data, dn is the d220 spacing at sin2ψ = 0 (y intercept), E<220> is Young's modulus in the <220> direction, and ν is the Poisson ratio. E<220> is estimated as 18.5 GPa, as shown in the Supplemental information. The typical ν value of 0.33 is assumed.28Feng J. Mechanical properties of hybrid organic-inorganic CH3NH3BX3 (B= Sn, Pb; X= Br, I) perovskites for solar cell absorbers.APL Mater. 2014; 2: 081801Crossref Scopus (230) Google Scholar The calculated residual stresses for Cs0.3FA0.7Sn0.3Pb0.7I3 perovskite thin films with and without SnCl2⋅3FACl additive are presented in Figure 3C. Overall, the tensile σR in the pristine thin film is estimated at 42–51 MPa, which is reduced to only 19–24 MPa for the SnCl2⋅3FACl case. In addition, it was found that replacing the SnCl2⋅3FACl additive with SnF2⋅3FACl can also reduce the residual stress to some extent, but not as much as SnCl2⋅3FACl (Figure S13). Based on these results, the reduced residual stresses in the thin film associated with the SnCl2⋅3FACl additive are likely to be an important factor contributing to the exceptional device performance, in addition to the microstructural considerations. To elucidate the possible mechanisms responsible for the low residual stresses due to the SnCl2⋅3FACl additive, mechanical delamination tests were performed, as described elsewhere.29Dai Z. Yadavalli S.K. Hu M. Chen M. Zhou Y. Padture N.P. Effect of grain size on the fracture behavior of organic-inorganic halide perovskite thin films for solar cells.Script. Mater. 2020; 185: 47-50Crossref Scopus (16) Google Scholar,30Rolston N. Printz A.D. Tracy J.M. Weerasinghe H.C. Vak D. Haur L.J. Priyadarshi A. Mathews N. Slotcavage D.J. McGehee M.D. et al.Effect of cation composition on the mechanical stability of perovskite solar cells.Adv. Energy Mater. 2018; 8: 1702116Crossref Scopus (81) Google Scholar Residual stresses in perovskite thin films typically develop when the perovskite phase crystallizes from the as-spun thin film during the thermal annealing process, where the perovskite thin film attaches to the substrate at high temperatures and is subsequently cooled down. The significantly higher CTE of perovskite compared with that of glass results in the tensile nature of the residual stresses in the thin film after cooling (Figure 3D).25Ramirez C. Yadavalli S.K. Garces H.F. Zhou Y. Padture N.P. Thermo-mechanical behavior of organic-inorganic halide perovskites for solar cells.Script. Mater. 2018; 150: 36-41Crossref Scopus (50) Google Scholar,31Rolston N. Bush K.A. Printz A.D. Gold-Parker A. Ding Y. Toney M.F. McGehee M.D. Dauskardt R.H. Engineering stress in perovskite solar cells to improve stability.Adv. Energy Mater. 2018; 8: 1802139Crossref Scopus (133) Google Scholar We find that the pure perovskite phase has formed immediately after the spin-coating process (without heat treatment) for both cases, without and with the SnCl2⋅3FACl additive (Figure S14). However, the structural integrity of the perovskite-substrate interface during this stage is strikingly different. In the additive-free case, it is found that the delamination occurs primarily at the perovskite-substrate interface, whereas the thin film fractures within the bulk thin film in the SnCl2⋅3FACl additive case (see Figure S15). This indicates that the SnCl2⋅3FACl additive promotes the bonding between the perovskite thin film and the substrate before heating, reducing the development of residual stresses upon the subsequent heating-cooling cycle. This proposed mechanism is illustrated schematically in Figure 3D. Figure 4A shows the J-V curves of the champion device based on Cs0.3FA0.7Sn0.3Pb0.7I3 using the additive SnCl2⋅xFACl (x = 3). It shows a PCE of 19.3% in reverse scan and 18.5% in forward scan, and SPO efficiency of 19.1% (Figure 4A, inset). The detailed PV parameters are shown in Table S3. The EQE spectra along with the integrated JSC are shown in Figure 4B, where the latter is 28.3 mA/cm2, which is within 3%–4% of the J-V measurement. To test the impact of the SnCl2⋅3FACl additive on the device stability, we evaluated the continuous operation (Figure 4C) with MPP tracking of unencapsulated Cs0.3FA0.7Sn0.3Pb0.7I3 devices under one-sun-intensity illumination, in nitrogen atmosphere, with ambient temperature of about 45°C (ISOS-L-1 stability32Khenkin M.V. Katz E.A. Abate A. Bardizza G. Berry J.J. Brabec C. Brunetti F. Bulović V. Burlingame Q. Di Carlo A. et al.Consensus statement for stability assessment and reporting for perovskite photovoltaics based on ISOS procedures.Nat. Energy. 2020; 5: 35-49Crossref Scopus (344) Google Scholar). In comparison to the pristine and SnF2⋅3FACl-additive-based devices (Figure S16), the SnCl2⋅3FACl-additive-based device showed much improved operational stability with a T80 ∼750 h, where T80 refers to the duration at 80% retention of the initial PCE. This continuous one sun operation stability is approaching that for PSCs based on Pb only, and it represents the best reported operational stability for high-efficiency (19%–20%) Sn-Pb ideal-band-gap PSCs. It is worth pointing out that the T90 is ∼690 h in Figure 4C. The observed increasing degradation rate starting at ∼650 h is likely associated with the use of the Ag contact, which can migrate to induce degradation.33Prasanna R. Leijtens T. Dunfield S.P. Raiford J.A. Wolf E.J. Swifter S.A. Werner J. Eperon G.E. de Paula C. Palmstrom A.F. et al.Design of low bandgap tin–lead halide perovskite solar cells to achieve thermal, atmospheric and operational stability.Nat. Energy. 2019; 4: 939-947Crossref Scopus (141) Google Scholar PEDOT:PSS is also known to cause device degradation in Sn-Pb PSCs.33Prasanna R. Leijtens T. Dunfield S.P. Raiford J.A. Wolf E.J. Swifter S.A. Werner J. Eperon G.E. de Paula C. Palmstrom A.F. et al.Design of low bandgap tin–lead halide perovskite solar cells to achieve thermal, atmospheric and operational stability.Nat. Energy. 2019; 4: 939-947Crossref Scopus (141) Google Scholar These contact layer optimization strategies are expected to further increase the device stability in the future. Finally, we further tested the effect of tuning the Cs content on device performance. By reducing the Cs content to 10%, the resulting perovskite Cs0.1FA0.9Sn0.3Pb0.7I3 has a band gap of ∼1.32 eV (Figure S17), which is also near the ideal band gap (∼1.34 eV) for single-junction devices. Figure S18 shows the device characteristics of the champion Cs0.1FA0.9Sn0.3Pb0.7I3 device by using the SnCl2⋅3FACl additive (5 mol%). The device efficiency is slightly higher (SPO = 19.5%; Table S3), but the stability is slightly reduced to a T80 of ∼430 h, compared with Cs0.3FA0.7Sn0.3Pb0.7I3 devices. Future work is needed to further examine the impact of varying Cs amount on the efficiency and stability of Sn-Pb-based ideal-band-gap PSCs. Our results suggest that adjusting/improving the Sn-Pb perovskite absorber layer is critical for enhancing Sn-Pb perovskite device efficiency and stability. Our results also indicate the importance of not only improving the thin-film microstructure but also reducing residual stresses in Sn-Pb thin films when developing Sn-Pb-based ideal-band-gap PSCs having simultaneous high PCE and long operational stability. In summary, we have demonstrated high-performance ideal-band-gap MA-free PSCs with high PCEs near 20% and long operational stability (T80 ∼750 h). The key to this development is the use of a complex additive of SnCl2⋅3FACl in the Sn-Pb perovskite thin film processing, which leads to not only better film crystallinity and favorable grain-boundary structures, but also significantly lower undesirable residual stresses in the resulting thin films. Additives with various concentrations and halide types (SnX2⋅FACl, X = Cl, F) are shown to profoundly influence residual stresses and the corresponding solar cell performance, which could be due to the physical effects (film microstructure, crystallinity, etc.) and the hydrogen bond strength brought forth by the halide contents distributed within perovskite thin films or at the interfaces with charge transport layers. Therefore, careful selection and tailoring of the SHC additive is the key to successful optimization of perovskite film growth that is a feature of additive-induced interfacial bonding to the substrate layer, during the early stage of film crystallization. Apart from the scope of solar cell application, this SHC additive, which is potentially versatile in composition, can also be tailored to meet specific requirements for resulting thin film properties and used for improving the performance of other electronic devices, such as light-emitting devices and photodetectors.